Issue 59, 2021, Issue in Progress

The growth behavior of brain-like SnO2 microspheres under a solvothermal reaction with tetrahydrofuran as a solvent and their gas sensitivity

Abstract

In this paper, the growth behavior of brain-like SnO2 microspheres synthesized by a tetrahydrofuran (THF) solvothermal method was studied. Unlike water or ethanol as the solvent, THF is a medium polar and aprotic solvent. Compared with other common polar solvents, the THF has no strong irregular effects on the growth process of SnO2. In addition, the viscosity of THF also helps the SnO2 to form a regular microstructure. The growth behavior of the brain-like SnO2 microspheres is controlled by changing the synthesis temperature of the reaction. The SEM and TEM results reveal that the SnO2 forms particles first (125 °C/3 h), and then these nanoparticles connect to each other forming nanowires and microspheres (diameter ≈ 1–2 μm) at 135 °C for 3 h; finally the microspheres further aggregate to form double or multi-sphere structures at 180 °C for 3 h. In this paper, the brain-like SnO2 microspheres obtained at 125 °C for 3 h were selected as sensitive materials to test their gas sensing performance at different operating temperature (50 °C and 350 °C). The H2S was tested at 50 °C which is the lowest operating temperature for the sensor. The combustible gas (H2/CH4/CO) was measured at 350 °C which is the highest temperature for the sensor. They all have extremely high sensitivity, but only H2S has excellent selectivity.

Graphical abstract: The growth behavior of brain-like SnO2 microspheres under a solvothermal reaction with tetrahydrofuran as a solvent and their gas sensitivity

Article information

Article type
Paper
Submitted
06 Sep 2021
Accepted
05 Nov 2021
First published
22 Nov 2021
This article is Open Access
Creative Commons BY-NC license

RSC Adv., 2021,11, 37568-37574

The growth behavior of brain-like SnO2 microspheres under a solvothermal reaction with tetrahydrofuran as a solvent and their gas sensitivity

Y. Chen, N. Luo, Z. Li, J. Dong, X. Wang, Z. Cheng and J. Xu, RSC Adv., 2021, 11, 37568 DOI: 10.1039/D1RA06675G

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