Issue 17, 2021
From the journal:

Nanoscale Advances

Correction: Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices

Kisung Chae,ab   Andrew C. Kummel*a  and  Kyeongjae Cho*b  

* Corresponding authors

a Department of Chemistry and Biochemistry, University of California San Diego, La Jolla, CA, USA
E-mail: akummel@ucsd.edu

b Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, USA
E-mail: kjcho@utdallas.edu

Abstract

Correction for ‘Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices’ by Kisung Chae et al., Nanoscale Adv., 2021, DOI: 10.1039/d1na00230a.

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Article information

DOI
https://doi.org/10.1039/D1NA90069B
Article type
Correction
Submitted
20 Jul 2021
Accepted
20 Jul 2021
First published
09 Aug 2021
This article is Open Access
Creative Commons BY license

Nanoscale Adv., 2021,3, 5122-5122

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Correction: Hafnium–zirconium oxide interface models with a semiconductor and metal for ferroelectric devices

K. Chae, A. C. Kummel and K. Cho, Nanoscale Adv., 2021, 3, 5122 DOI: 10.1039/D1NA90069B

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