Robust bismuth-based interphases, comprised of bismuth and bismuth oxides, were developed using galvanic replacement reactions. Facilitated Mg atom adsorption and distinct interfacial Mg atom migration were demonstrated, greatly lowering the electrochemical energy penalty (23 mV for the nucleation process and 69 mV for the growth process at 1.0 mA cm−2).
H. Chu, Z. Zhang, Z. Song, A. Du, S. Dong, G. Li and G. Cui, Chem. Commun., 2021, 57, 9430 DOI: 10.1039/D1CC02048J
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