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Issue 25, 2018
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High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors

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Abstract

The nonpolar a-plane and m-plane of GaN are anisotropic due to the fact that in-plane stresses of nonpolar GaN along different directions are varied, which is considered to be the reason why they are chosen for the preparation of polarization-sensitive ultraviolet (UV) photo-detectors (PDs), etc., when compared to polar c-plane GaN-based UV PDs. However, the nonpolar GaN-based UV PDs suffer from poor-quality GaN epitaxial films, which limit their performance enhancement. Herein, we report the fabrication of high responsivity and low dark current nonpolar a-plane GaN-based metal-semiconductor–metal (MSM) UV PDs, by using high-quality a-plane GaN epitaxial films grown on r-plane sapphire substrates through control of the dislocation density. The ∼2.5 μm-thick GaN epitaxial films were grown by the combination of low-temperature pulsed laser deposition and high-temperature metal–organic chemical deposition technologies and were then fabricated into MSM UV PDs. The MSM UV PDs were revealed to have a high responsivity of 0.74 A W−1 and a low dark current of 1.3 nA at an applied bias of 2 V, as well as a very small full-width at half-maximum for GaN(11-20) of 360 arcsec. The performance is better than the results for all of the nonpolar GaN-based MSM UV PDs ever reported. These UV PDs shed light on the potential for wide applications.

Graphical abstract: High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors

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Publication details

The article was received on 11 May 2018, accepted on 04 Jun 2018 and first published on 05 Jun 2018


Article type: Communication
DOI: 10.1039/C8TC02281J
Citation: J. Mater. Chem. C, 2018,6, 6641-6646
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    High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors

    W. Wang, Z. Yang, Z. Lu and G. Li, J. Mater. Chem. C, 2018, 6, 6641
    DOI: 10.1039/C8TC02281J

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