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Polarity flipping in an isotype heterojunction (p-SnS/p-Si) to enable a broadband wavelength selective energy-efficient photodetector

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Abstract

Wavelength selective photodetectors can offer such benefits as filterless optoelectronic properties. Herein, we fabricated a p–p isotype heterojunction (SnS/Si), which exhibits selective photodetection at zero-bias. This device clearly detects ultraviolet, visible and near infrared (NIR) photons by polarity control, as was experimentally demonstrated and well-examined by one-dimensional simulations.

Graphical abstract: Polarity flipping in an isotype heterojunction (p-SnS/p-Si) to enable a broadband wavelength selective energy-efficient photodetector

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Publication details

The article was received on 06 May 2018, accepted on 09 Jun 2018 and first published on 12 Jun 2018


Article type: Communication
DOI: 10.1039/C8TC02188K
Citation: J. Mater. Chem. C, 2018, Advance Article
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    Polarity flipping in an isotype heterojunction (p-SnS/p-Si) to enable a broadband wavelength selective energy-efficient photodetector

    M. Patel, M. Kumar and J. Kim, J. Mater. Chem. C, 2018, Advance Article , DOI: 10.1039/C8TC02188K

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