Polarity flipping in an isotype heterojunction (p-SnS/p-Si) to enable a broadband wavelength selective energy-efficient photodetector

Abstract

Wavelength selective photodetectors can offer such benefits as filterless optoelectronic properties. Herein, we fabricated a p–p isotype heterojunction (SnS/Si), which exhibits selective photodetection at zero-bias. This device clearly detects ultraviolet, visible and near infrared (NIR) photons by polarity control, as was experimentally demonstrated and well-examined by one-dimensional simulations.