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Issue 26, 2018
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Light-trapping enhanced ZnO–MoS2 core–shell nanopillar arrays for broadband ultraviolet-visible-near infrared photodetection

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Abstract

Two-dimensional (2D) MoS2 has important applications in the fields of photodetection, photovoltaics, and light-emitting diodes (LEDs) due to its superior electronic and optoelectronic properties. However, the planar thin-layered MoS2 usually suffers from low light-absorbing ability because of the short transmission path of incident light, which limits the photoelectric conversion quantum efficiency of the thin-layered MoS2-based photodetectors. Herein, we demonstrate a high-performance ZnO–MoS2 core–shell nanopillar (NP) array-based photodetector by depositing thin-layered MoS2 on ZnO NP arrays via magnetron sputtering. With the aid of the ZnO NP arrays, which show a strong light trapping effect, the light-absorbing ability of thin-layered MoS2 is greatly enhanced. As a result, the ZnO–MoS2 core–shell NP array-based photodetector exhibits a broadband response spanning from the ultraviolet (UV) to the visible and to the near-infrared (NIR) light region. Compared with the ZnO–MoS2 planar heterojunction, the photocurrent of the NP array-based photodetector under illumination is improved by up to 60 times. Our work opens up new opportunities for the development of high-performance, broadband photodetectors based on 2D semiconductor materials.

Graphical abstract: Light-trapping enhanced ZnO–MoS2 core–shell nanopillar arrays for broadband ultraviolet-visible-near infrared photodetection

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Publication details

The article was received on 03 May 2018, accepted on 08 Jun 2018 and first published on 12 Jun 2018


Article type: Paper
DOI: 10.1039/C8TC02139B
Citation: J. Mater. Chem. C, 2018,6, 7077-7084
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    Light-trapping enhanced ZnO–MoS2 core–shell nanopillar arrays for broadband ultraviolet-visible-near infrared photodetection

    L. Ning, T. Jiang, Z. Shao, K. Ding, X. Zhang and J. Jie, J. Mater. Chem. C, 2018, 6, 7077
    DOI: 10.1039/C8TC02139B

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