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Light-trapping enhanced ZnO-MoS2 core-shell nanopillar arrays for broadband ultraviolet-visible-near infrared photodetection

Abstract

Two‐dimensional (2D) MoS2 has important applications in the fields such as photodetection, photovoltaic, and light-emitting diodes (LEDs) due to its superior electronic and optoelectronic properties. However, the planar thin-layered MoS2 usually suffers from the low light‐absorbing ability because of the short transmission path of incident light, which limits the photoelectric conversion quantum efficiency of the thin-layered MoS2-based photodetectors. Herein, we demonstrate a high-performance ZnO-MoS2 core-shell nanopillar (NP) array-based photodetector by depositing thin-layered MoS2 on ZnO NP arrays via magnetron sputtering. With the aid of the ZnO NP arrays, which show strong light trapping effect, the light-absorbing ability of thin-layered MoS2 is greatly enhanced. As a result, ZnO-MoS2 core-shell NP array-based photodetector exhibits a broadband response spanning from the ultraviolet (UV) to the visible and to the near-infrared (NIR). Compared with the ZnO-MoS2 planar heterojunction, the photocurrent of NP array-based photodetector under illumination is improved by up to 60 times. Our work opens up new opportunities for the development of high-performance, broadband photodetectors based on 2D semiconductor materials.

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Publication details

The article was received on 03 May 2018, accepted on 08 Jun 2018 and first published on 12 Jun 2018


Article type: Paper
DOI: 10.1039/C8TC02139B
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Light-trapping enhanced ZnO-MoS2 core-shell nanopillar arrays for broadband ultraviolet-visible-near infrared photodetection

    L. Ning, T. Jiang, Z. Shao, K. Ding, X. Zhang and J. Jie, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC02139B

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