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Electronic transport properties of heterojunction devices constructed by single-wall Fe2Si and carbon nanotubes

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Abstract

The electronic structures of the armchair Fe2Si nanotubes are calculated by using the SGGA+U method. Novel heterostructure devices are prepared composed of single-wall Fe2Si nanotubes (Fe2Si NTs) and carbon nanotubes (CNTs). The results indicate that the (4,4) Fe2Si NT is a ferromagnetic half metal with 100% spin-polarization ratio at the Fermi energy level. These heterojunctions have spin-polarized transport properties but their spin-polarization ratios are relatively low. Interestingly, the (13,0) CNT–(n,n) Fe2Si NT–(13,0) CNT devices are all semiconductors but others are metallic. This study suggests that adding the novel Fe2Si NTs endows the CNTs with spin-polarized property and provides very valuable results for better understanding of the electronic structures of the heterostructure.

Graphical abstract: Electronic transport properties of heterojunction devices constructed by single-wall Fe2Si and carbon nanotubes

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Publication details

The article was received on 12 Apr 2018, accepted on 08 May 2018 and first published on 10 May 2018


Article type: Paper
DOI: 10.1039/C8TC01708E
Citation: J. Mater. Chem. C, 2018, Advance Article
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    Electronic transport properties of heterojunction devices constructed by single-wall Fe2Si and carbon nanotubes

    X. Dai, L. Zhang, J. Li, Z. Wang and H. Li, J. Mater. Chem. C, 2018, Advance Article , DOI: 10.1039/C8TC01708E

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