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Enhanced electrical conductivity and photoconductive properties of Sn-doped Sb2Se3 crystals

Abstract

Sb2Se3 is highly interesting semiconductor with high absorption coefficient in visible range and is composed of non-toxic and earth-abundant elements. To overcome the challenge of intrinsic low electrical conductivity of Sb2Se3 crystals, tin-doped (SnxSb1-x)2Se3 semiconductors (x=0.00, 0.03, 0.05, 0.07 and 0.10) have been synthesized by using conventional melt-quenching method in vacuum sealed silica tube. With increasing Sn doping concentration, the (SnxSb1-x)2Se3 crystals exhibited a great improvement of electrical conductivity by several orders of magnitude thanks to the great increase of carrier concentration reaching almost 2×1016 cm-3. Compared to undoped Sb2Se3, the dark current density of a representative (Sn0.10Sb0.90)2Se3 was increased by approximately 10 times and the photocurrent density with essentially visible illumination was increased by approximately 14 times. In addition, the doped sample showed a faster, reversible and stable photoresponse. Those excellent performances combined with the simple and easily scalable synthesis method pave the way for using this semiconductor for highly efficient photoelectric devices.

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Publication details

The article was received on 10 Apr 2018, accepted on 11 May 2018 and first published on 11 May 2018


Article type: Paper
DOI: 10.1039/C8TC01683F
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Enhanced electrical conductivity and photoconductive properties of Sn-doped Sb2Se3 crystals

    S. Chen, X. Qiao, Z. Zheng, M. Cathelinaud, H. Ma, X. Fan and X. Zhang, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC01683F

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