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Issue 23, 2018
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Polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor

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Abstract

The polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor at temperatures of 750 and 810 °C was investigated. For N-polar GaN, some regions were severely etched in such a way that vertically-aligned nanopipes were formed while areas other than those occupied by the nanopipes were barely etched. A cross-sectional transmission electron microscopy analysis revealed that the bottom of the nanopipes was observed to be connected to threading dislocation(s) while no threading-dislocation was observed beneath the unetched surface of N-polar GaN. In comparison, the threading-dislocation-free region in Ga-polar GaN domains was heavily etched, and GaN nanoneedles were formed on a relatively flat surface at temperatures as low as 750 °C. In order to understand the etched surface morphology of Ga-polar GaN (nanoneedles on a relatively flat surface), we proposed a physical model to describe this etching behavior, and a computational simulation based on our proposed model could explain the etched surface morphology of a Ga-polar GaN film exposed to HCl vapor.

Graphical abstract: Polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor

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Publication details

The article was received on 08 Apr 2018, accepted on 13 May 2018 and first published on 16 May 2018


Article type: Paper
DOI: 10.1039/C8TC01640B
Citation: J. Mater. Chem. C, 2018,6, 6264-6269
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    Polarity and threading dislocation dependence of the surface morphology of c-GaN films exposed to HCl vapor

    H. Lee, D. Jang, D. Kim, H. S. Kim and C. Kim, J. Mater. Chem. C, 2018, 6, 6264
    DOI: 10.1039/C8TC01640B

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