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Interfacial Effects on Solution-Sheared Thin-Film Transistors

Abstract

Meniscus-guided solution-sheared processes are considered a promising approach to develop high-performance polymer-based transistors owing to their enhanced electrical performance and improved cystalline structure. However, the effect of the interface on molecular packing and charge transport in the solution-sheared devices remains unclear. Therefore, in this study, we investigated interfacial effects on the electrical properties and crystalline morphology of solution-sheared polymer films based on a high-mobility donor–acceptor copolymer, poly(diketopyrrolo[3,4-c] pyrrole-co-thieno [3,2-b]thiophene) (PDBT-co-TT). We employed solution-shearing processes for substrates modified with octadecyl trimethoxylsilane (OTS), phenylbutyltrimethoxysilane, and bare substrates for device fabrication. The highest mobility obtained with OTS devices was 1.77 cm2 V−1 s−1, which is much higher than that obtained with the bare structure. In addition, OTS-treated devices exhibited the highest polymer alignment. According to the analysis of thicknesses and shearing speed, we conclude that OTS-modified substrates provide an ideal interface, fulfilled with simple mass balance near the meniscus, in contrast to the bare substrate. Grazing incidence X-ray diffraction analysis revealed that the OTS-based film showed the longest coherence length and tunable lamellar d-spacing distance with shearing speeds. In contrast, the film made on the bare subtrate exhibited the smallest conherence length and negligible change of lamellar d-spacing distance with shearing speeds. Thus, this study demonstrates the importance of the interface on polymer alignment, charge transport and meta-stable molecular packing for the solution shearing process. This may enhance the application of solution processes in the electronics industry.

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Publication details

The article was received on 27 Mar 2018, accepted on 10 May 2018 and first published on 10 May 2018


Article type: Paper
DOI: 10.1039/C8TC01439F
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Interfacial Effects on Solution-Sheared Thin-Film Transistors

    D. Guo, Y. Tsai, T. Yu and W. Lee, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC01439F

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