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Issue 23, 2018
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Monolayer tellurene–metal contacts

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Abstract

Two-dimensional (2D) atomic crystals are promising channel materials for next generation electronics due to its outstanding gate electrostatics and few dangling bonds. Recently, tellurene, a new experimentally accessible Group-VI 2D tellurium, has drawn attention due to its large on/off ratios, high mobility and significant air stability. Herein, for the first time, we comprehensively examine the interfacial characteristics of monolayer (ML) tellurene field-effect transistors with a series of common bulk metals and 2D graphene as electrodes by using ab initio electronic structure calculations and quantum transport simulations. Furthermore, a lateral n-type Schottky contact is formed when contacting with Au in the a direction and Sc in both directions, while a lateral p-type Schottky contact is formed with Au in the b direction, and Cu, Ni, Ag, Pt, and Pd in both directions as a result of strong Fermi level pinning (FLP). The obtained FLP factor is 0.15 in the a direction and 0.09 in the b direction. Remarkably, a highly desirable lateral p-type Ohmic contact is formed with graphene in both directions. This investigation gives insight into the interfacial properties and guidance in electrode selection for ML tellurene devices.

Graphical abstract: Monolayer tellurene–metal contacts

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Publication details

The article was received on 26 Mar 2018, accepted on 09 May 2018 and first published on 09 May 2018


Article type: Paper
DOI: 10.1039/C8TC01421C
Citation: J. Mater. Chem. C, 2018,6, 6153-6163
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    Monolayer tellurene–metal contacts

    J. Yan, X. Zhang, Y. Pan, J. Li, B. Shi, S. Liu, J. Yang, Z. Song, H. Zhang, M. Ye, R. Quhe, Y. Wang, J. Yang, F. Pan and J. Lu, J. Mater. Chem. C, 2018, 6, 6153
    DOI: 10.1039/C8TC01421C

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