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Monolayer Tellurene—Metal Contacts

Abstract

Two-dimensional (2D) atomic crystal is a competitive channel material for next generation electronics due to its excellent gate electrostatics and few dangling bond. Tellurene, a new experimentally accessible Group-VI 2D tellurium, has drawn recent attention for its large on/off ratios, high mobility and significant air stability. We comprehensively study for the first time the interfacial properties of monolayer (ML) tellurene field-effect transistors with a series of common bulk metals and 2D graphene as electrodes by using ab initio electronic structure calculation and quantum transport simulation. Furthermore, a lateral n-type Schottky contact is formed when contacting with Au in a direction and Sc in both directions, while a lateral p-type Schottky contact with Au in b direction, and Cu, Ni, Ag, Pt, Pd in both directions as a result of a strong Fermi level pinning (FLP). The calculated Fermi level pinning factor is 0.15 in a direction and 0.09 in b direction. Remarkably, a highly desirable lateral p-type Ohmic contact is formed with graphene in both directions. Our study provides an insight into the interfacial properties and a guidance in electrode selection for ML tellurene devices.

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Publication details

The article was received on 26 Mar 2018, accepted on 09 May 2018 and first published on 09 May 2018


Article type: Paper
DOI: 10.1039/C8TC01421C
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Monolayer Tellurene—Metal Contacts

    J. Yan, X. zhang, Y. Pan, J. Li, B. Shi, S. Liu, J. Yang, Z. Song, H. Zhang, M. Ye, R. Quhe, Y. Wang, J. Yang, F. Pan and J. Lu, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC01421C

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