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A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm

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Abstract

High-performance infrared photodetectors (PDs) have attracted much attention due to their great significance in military and industrial applications. The improvement of two-dimensional (2D) materials offers an open platform for designing various high-performance PDs, especially in the infrared region, which can overcome the drawbacks of the traditional epitaxial thin film based PDs, such as the complicated preparation processes, low-temperature operating conditions and inability to be miniaturized. In this work, a high-performance infrared PD based on a MoS2/CdTe p–n heterojunction with type-II band alignment was constructed and investigated. This PD showed a broadband photoresponse from 200 nm to 1700 nm, which is far beyond the band-gaps of MoS2 and CdTe. Moreover, a high responsivity, specific detectivity and fast response speed were achieved. These results demonstrate that the MoS2/CdTe p–n heterojunction has great potential in room-temperature infrared detection, and provide a way to design high-performance infrared PDs for other 2D materials.

Graphical abstract: A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm

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Publication details

The article was received on 14 Mar 2018, accepted on 09 Apr 2018 and first published on 11 Apr 2018


Article type: Communication
DOI: 10.1039/C8TC01237G
Citation: J. Mater. Chem. C, 2018, Advance Article
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    A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm

    Y. Wang, X. Huang, D. Wu, R. Zhuo, E. Wu, C. Jia, Z. Shi, T. Xu, Y. Tian and X. Li, J. Mater. Chem. C, 2018, Advance Article , DOI: 10.1039/C8TC01237G

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