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Tris (ethylene diamine) nickel acetate as a promising precursor for hole transport layer in planar structured perovskite solar cells

Abstract

Owing hysteresis free characteristics and good reproducibility, inverted p-i-n Perovskite Solar Cells (PSC) are gaining large interest in the photovoltaic field. In this contest, the request for stable materials calls for the development of robust transporting layers compatible with the fabrication processes of the solar cell. In this paper we introduce a new precursor, the tris (ethylene diamine) nickel acetate, for low temperature (280-300 °C) deposition of NiO hole transporting layer. A full characterization of the deposited NiO film layer is performed by using a combined investigation comprising XRD, Raman and Auger spectroscopy. We found a direct correlation between device performance and NiO thickness with maximum efficiency, exceeding 15%, reached for the thinner NiO (10nm) layer.

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Publication details

The article was received on 09 Mar 2018, accepted on 11 May 2018 and first published on 12 May 2018


Article type: Paper
DOI: 10.1039/C8TC01169A
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Tris (ethylene diamine) nickel acetate as a promising precursor for hole transport layer in planar structured perovskite solar cells

    D. S. Saranin, V. Mazov, L. O. Luchnikov, D. Lypenko, P. A. Gostishev, D. Muratov, D. A. Podgorny, Д. M. Migunov, S. I. Didenko, M. Orlova, D. Kuznetsov, A. R. Tameev and A. Di Carlo, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC01169A

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