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Chemical Interactions in Atomic Layer Deposition of Ge-Sb-Se-Te Films and Their Ovonic Threshold Switching Behavior

Abstract

Ge−Sb−Se-Te (GSST) quaternary films were prepared through atomic layer deposition (ALD) to ensure their amorphous stability for ovonic threshold switching (OTS) applications. Se, a typical phase-change material, was incorporated into Ge-Sb-Te (GST) films using Sb(OC2H5)3 and [(CH3)3Si]2Se precursors. The process produces highly conformal, uniform films consisting of stoichiometric binaries of GeTe2, Sb2Te3, and Sb2Se3. A detailed analysis of the atomic compositions revealed Te substitution for Se on the film surface through the ligand exchange reaction between the Te and Se precursors. Comparative experimental and simulation studies on the OTS behaviors showed that Ge and Se increase the optical bandgaps while Se decreases the density of the localized states. The amorphous stability of Se-containing films enhances the cycling endurance of the OTS device up to 105 cycles. As conformality and atomic-level accuracy in terms of thickness and composition are prerequisites for three-dimensional crossbar-type passive arrays, the ALD process and the OTS performance presented in this work have a high potential utility for constructing a selector element in non-volatile high-density memories.

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Publication details

The article was received on 02 Mar 2018, accepted on 10 Apr 2018 and first published on 12 Apr 2018


Article type: Paper
DOI: 10.1039/C8TC01041B
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Chemical Interactions in Atomic Layer Deposition of Ge-Sb-Se-Te Films and Their Ovonic Threshold Switching Behavior

    S. Yoo, C. Yoo, E. Park, W. Kim, Y. K. Lee and C. S. Hwang, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC01041B

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