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Fullerene-derivative as Interlayer for High Performance Organic Thin-film Transistors

Abstract

In this paper, a novel fullrence-naphthalenediimide derivative (abbreviated as C60-NDI) was synthesized and used as a interlayer in pentacene transistors. We found that significantly improment was achieved with C60-NDI as interlayer between pentacene active layer and gate dielectric. The highest field-effect mobility and on/off current ratio was approaching 1.76 cm2 V-1 s-1 and 108, respectively, which is even higher than that of devices in the same experimental conditions fabricated on conventional SAMs (such as octadecylsilanes (OTS) and hexamethylene disilazane (HMDS)) treated substrates. Further investigations carried out by contact angle test, atomic force microscopy, x-ray diffraction, and Raman spectrum demonstrated that the formation of large grain sizes, high crystallinity and good grain interconnectivity for pentacene thin films on C60-NDI surface leads to the high device performance, suggesting its applications as a new interface engineering species for modification gate dielectric to improve device performance.

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Publication details

The article was received on 01 Mar 2018, accepted on 09 May 2018 and first published on 17 May 2018


Article type: Paper
DOI: 10.1039/C8TC01014E
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Fullerene-derivative as Interlayer for High Performance Organic Thin-film Transistors

    W. Hu, J. Tan, J. Sørensen and H. Dong, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC01014E

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