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Low-temperature fabrication of solution-processed hafnium oxide gate insulator films using a thermally purified solution process

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Abstract

We proposed a simple method, a thermally purified solution (TPS) process, to lower the fabrication temperature of solution-processed hafnium oxide (HfOx) gate insulator films. The TPS process is proceeded by transferring thermal energy to the HfOx precursor solution ‘BEFORE’ film formation. The TPS process could induce chemical reactions including pre-hydrolysis by thermal energy in the HfOx precursor solution. These chemical reactions reduce the required thermal energy for forming a solution-processed HfOx film and improve the film quality. As a result, the HfOx film fabricated via the TPS process has satisfactory dielectric characteristics: a breakdown electric field of ∼6 MV cm−1, a leakage current density of ∼10−9 A cm−2, and a dielectric constant of 10.23 at low temperatures, i.e., below 200 °C. Solution-processed indium oxide (In2O3) thin film transistors with a HfOx gate insulator fabricated via the TPS process exhibit a field effect mobility of 3.67 cm2 V−1 s−1, an on/off current ratio of 9.8 × 106, and a subthreshold swing of 0.18 V dec−1.

Graphical abstract: Low-temperature fabrication of solution-processed hafnium oxide gate insulator films using a thermally purified solution process

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Publication details

The article was received on 22 Feb 2018, accepted on 09 Apr 2018 and first published on 11 Apr 2018


Article type: Paper
DOI: 10.1039/C8TC00899J
Citation: J. Mater. Chem. C, 2018, Advance Article
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    Low-temperature fabrication of solution-processed hafnium oxide gate insulator films using a thermally purified solution process

    J. Chung, Y. J. Tak, W. Kim, J. W. Park, T. S. Kim, J. H. Lim and H. J. Kim, J. Mater. Chem. C, 2018, Advance Article , DOI: 10.1039/C8TC00899J

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