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Issue 15, 2018
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The conversion mechanism of amorphous silicon to stoichiometric WS2

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Abstract

The deposition of ultra-thin tungsten films and their related 2D chalcogen compounds on large area dielectric substrates by gas phase reactions is challenging. The lack of nucleation sites complicates the adsorption of W-related precursors and subsequent sulfurization usually requires high temperatures. We propose here a technique in which a thin solid amorphous silicon film is used as reductant for the gas phase precursor WF6 leading to the conversion to metallic W. The selectivity of the W conversion towards the underlying dielectric surfaces is demonstrated. The role of the Si surface preparation, the conversion temperature, and Si thickness on the formation process is investigated. Further, the in situ conversion of the metallic tungsten into thin stoichiometric WS2 is achieved by a cyclic approach based on WF6 and H2S pulses at the moderate temperature of 450 °C, which is much lower than usual oxide sulfurization processes.

Graphical abstract: The conversion mechanism of amorphous silicon to stoichiometric WS2

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Publication details

The article was received on 11 Feb 2018, accepted on 19 Mar 2018 and first published on 20 Mar 2018


Article type: Paper
DOI: 10.1039/C8TC00760H
Citation: J. Mater. Chem. C, 2018,6, 4122-4130
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    The conversion mechanism of amorphous silicon to stoichiometric WS2

    M. H. Heyne, J. de Marneffe, T. Nuytten, J. Meersschaut, T. Conard, M. Caymax, I. Radu, A. Delabie, E. C. Neyts and S. De Gendt, J. Mater. Chem. C, 2018, 6, 4122
    DOI: 10.1039/C8TC00760H

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