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Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods

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Abstract

We report on the investigation of the influence of the molecular packing and film morphology on the field-effect charge mobility in 2,3-thienoimide-based oligothiophenes semiconductors (Cn-NT4N). Organic field-effect transistors are realized by implementing both vacuum and solution methods in order to control the solid-state phase of the active layer. Thermal sublimation in a high vacuum chamber and supersonic molecular beam deposition were used as vacuum-based fabrication approaches for preparing thin films, while lithographically controlled wetting was used, as a solution-deposition technique, for the fabrication of the microstructured films. Thermal sublimation leads to thin films with a phase packing showing ambipolar behaviour, while supersonic molecular beam deposition enables, by varying the deposition rate, the formation of two different crystal phases, showing ambipolar and unipolar field-effect behaviours. On the other hand, lithographically controlled wetting enables the formation of Cn-NT4N microstructured active layers and their implementation in field-effect transistors.

Graphical abstract: Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods

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Publication details

The article was received on 31 Jan 2018, accepted on 29 Mar 2018 and first published on 29 Mar 2018


Article type: Paper
DOI: 10.1039/C8TC00544C
Citation: J. Mater. Chem. C, 2018, Advance Article
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    Tuning polymorphism in 2,3-thienoimide capped oligothiophene based field-effect transistors by implementing vacuum and solution deposition methods

    E. Benvenuti, D. Gentili, F. Chiarella, A. Portone, M. Barra, M. Cecchini, C. Cappuccino, M. Zambianchi, S. G. Lopez, T. Salzillo, E. Venuti, A. Cassinese, D. Pisignano, L. Persano, M. Cavallini, L. Maini, M. Melucci, M. Muccini and S. Toffanin, J. Mater. Chem. C, 2018, Advance Article , DOI: 10.1039/C8TC00544C

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