Jump to main content
Jump to site search


Ultrathin flexible electronic device based on tunneling effect: a flexible ferroelectric tunnel junction

Abstract

The flexible electronics have attracted long-standing attention in today’s energy-conscious world. Among the flexible electronics, flexible ferroelectric tunnel junction can realize non-destructive readout and consume less energy, and it may be a very promising device owing to the advantages of excellent portability, bendability and being lightweight. However, few flexible ferroelectric tunnel junctions with good performance have been reported because the inorganic materials with good ferroelectric properties always have a high crystallization temperature which restricts the flexible substrate selection. In this report, we report a flexible ferroelectric tunnel junction which is based on PbZr0.52Ti0.48O3 film grown on Mica with a bottom electrode of SrRuO3 film. The flexible ferroelectric tunnel junction in asymmetric structure not only can achieve nondestructive readout, but also have good bendability. Especially, the on/off ratio of the junction averages about 1.08×104%. The application of flexible ultrathin ferroelectric film is beneficial to realize the flexible ferroelectric electronic devices which are integrated with the flexible circuit system in modern microelectronics.

Back to tab navigation

Supplementary files

Publication details

The article was received on 30 Jan 2018, accepted on 13 Apr 2018 and first published on 17 Apr 2018


Article type: Paper
DOI: 10.1039/C8TC00500A
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
  •   Request permissions

    Ultrathin flexible electronic device based on tunneling effect: a flexible ferroelectric tunnel junction

    P. Hou, K. Yang, K. Ni, J. Wang, X. Zhong, M. Liao and S. Zheng, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC00500A

Search articles by author

Spotlight

Advertisements