Jump to main content
Jump to site search

Issue 17, 2018
Previous Article Next Article

Dopant-free hole transport materials based on alkyl-substituted indacenodithiophene for planar perovskite solar cells

Author affiliations

Abstract

Two dopant-free hole transporting materials (HTMs) comprising a planar indacenodithiophene (IDT) core with different alkyl chains (either C4 or C6) and electron-rich methoxytriphenylamine (TPA) side arms were synthesized (namely IDTC4-TPA and IDTC6-TPA, respectively) and successfully employed in CH3NH3PbI3 perovskite solar cells. These HTMs can be obtained from relatively cheap starting materials by adopting a facile preparation procedure that does not use expensive and complicated purification techniques. In the crystal lattice, each of these molecules interacted with either the CH/π or CH/O hydrogen bonds. At the same time, the IDTC6 backbone enables a tight molecular arrangement based on π–π stacking interactions (3.399 Å); this causes the new material to have a higher hole mobility than the standard IDTC4-based HTM. Moreover, the photoluminescence quenching in a perovskite/HTM film structure was shown to be more effective at the perovskite/IDTC6-TPA interface than at the perovskite/IDTC4-TPA interface. Consequently, devices fabricated using IDTC6-TPA show superior photovoltaic properties (exhibiting an optimal performance of 15.43%) compared with IDTC4-TPA-containing devices.

Graphical abstract: Dopant-free hole transport materials based on alkyl-substituted indacenodithiophene for planar perovskite solar cells

Back to tab navigation

Supplementary files

Publication details

The article was received on 24 Jan 2018, accepted on 10 Apr 2018 and first published on 12 Apr 2018


Article type: Paper
DOI: 10.1039/C8TC00385H
Citation: J. Mater. Chem. C, 2018,6, 4706-4713
  •   Request permissions

    Dopant-free hole transport materials based on alkyl-substituted indacenodithiophene for planar perovskite solar cells

    X. Liu, E. Rezaee, H. Shan, J. Xu, Y. Zhang, Y. Feng, J. Dai, Z. Chen, W. Huang and Z. Xu, J. Mater. Chem. C, 2018, 6, 4706
    DOI: 10.1039/C8TC00385H

Search articles by author

Spotlight

Advertisements