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Issue 15, 2018
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Excess axial electrostatic repulsion as a criterion for pentagonal bipyramidal DyIII single-ion magnets with high Ueff and TB

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Abstract

In this work, a large excess of electrostatic repulsion, arising from the axial ligands, over that from the equatorial ligands is taken as the design strategy for high performance pentagonal bipyramidal (PBP) DyIII single-ion magnets (SIMs). In this strategy, two PBP DyIII-SIMs (1 and 2) [Dy(bbpen-CH3)X] (X = Cl, 1; Br, 2; H2bbpen = N,N′-bis(2-hydroxybenzyl)-N,N′-bis(2-methylpyridyl)ethylenediamine) were synthesized and structurally characterized on the basis of a highly symmetrical ligand H2bbpen-CH3 in which an electron-donating group (–CH3) was installed to favor the conformation necessary for the axial oxygen atom coordinating to DyIII. Dynamic magnetic measurements verify the value of our design strategy since complex 2 exhibits high performance with large Ueff (above 1000 K) and a high magnetic hysteresis temperature (15 K). Ab initio calculations further verified the importance of the high excess of axial interaction which eventually leads to the special electronic structure possessing the desired magnetic properties. The search for excessive axial repulsion is not incompatible with the strategy based on local symmetry around the central ion since various high-performance PBP DyIII-SIMs of both clearly distorted and nearly ideal geometries successfully acquire such a kind of excess. Apparently this study presents an alternative to the designing strategy for promising SIMs.

Graphical abstract: Excess axial electrostatic repulsion as a criterion for pentagonal bipyramidal DyIII single-ion magnets with high Ueff and TB

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Publication details

The article was received on 22 Jan 2018, accepted on 13 Mar 2018 and first published on 14 Mar 2018


Article type: Paper
DOI: 10.1039/C8TC00353J
Citation: J. Mater. Chem. C, 2018,6, 4273-4280
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    Excess axial electrostatic repulsion as a criterion for pentagonal bipyramidal DyIII single-ion magnets with high Ueff and TB

    Z. Jiang, L. Sun, Q. Yang, B. Yin, H. Ke, J. Han, Q. Wei, G. Xie and S. Chen, J. Mater. Chem. C, 2018, 6, 4273
    DOI: 10.1039/C8TC00353J

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