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Interface Dipole for Remarkable Efficiency Enhancement in All-solution-processable Transparent Inverted Quantum Dot Light-emitting Diodes

Abstract

We report our effort to develop high performing all-solution-processable transparent inverted quantum-dot light-emitting diodes (QD-LEDs) by interposing an interface dipole between the ZnO electron-transporting layer (ETL) and the quantum dot light-emitting layer. It shows that the electrostatic interaction between the N+ groups in the polar conjugated polyelectrolyte molecules and the hydroxyl (OH) groups on the ZnO ETL surface creates the interface dipole. The presence of an optimal interface dipole benefits the efficient operation of QD-LEDs in two ways: (1) it effectively reduces the energy barrier at the ETL/QD emisive layer interface for efficient charge injection, and (2) it prevents the exciton quenching by suppression of ZnO surface defects. The combined effects resulted in a significant enhancement in the performance of the transparent inverted QD-LED, achieving an impressive high maximum luminance of 10011 cd/m2, which is 75% higher than that of a control device made with a pristine ZnO ETL (5721 cd/m2). QD-LEDs with an optimal interface dipole also possess a high luminous efficiency of 1.55 cd/A, which is 57% higher than that of a control QD-LED (0.99 cd/A).

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Publication details

The article was received on 18 Jan 2018, accepted on 11 Feb 2018 and first published on 12 Feb 2018


Article type: Paper
DOI: 10.1039/C8TC00303C
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Interface Dipole for Remarkable Efficiency Enhancement in All-solution-processable Transparent Inverted Quantum Dot Light-emitting Diodes

    L. Chen, M. Lee, Y. Wang, Y. S. Lau, A. A. Syed and F. Zhu, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C8TC00303C

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