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Issue 10, 2018
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Interface dipole for remarkable efficiency enhancement in all-solution-processable transparent inverted quantum dot light-emitting diodes

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Abstract

We report our efforts to develop high performing all-solution-processable transparent inverted quantum-dot light-emitting diodes (QD-LEDs) by interposing an interface dipole between the ZnO electron-transporting layer (ETL) and the quantum dot light-emitting layer. This shows that the electrostatic interaction between the N+ groups in the polar conjugated polyelectrolyte molecules and the hydroxyl (OH) groups on the ZnO ETL surface creates the interface dipole. The presence of an optimal interface dipole benefits the efficient operation of the QD-LEDs in two ways: (1) it effectively reduces the energy barrier at the ETL/QD emissive layer interface for efficient charge injection, and (2) it prevents the exciton quenching by suppression of the ZnO surface defects. The combined effects resulted in a significant enhancement in the performance of the transparent inverted QD-LED, achieving an impressive high maximum luminance of 10 011 cd m−2, which is 75% higher than that of a control device made with a pristine ZnO ETL (5721 cd m−2). The QD-LEDs with an optimal interface dipole also possess a high luminous efficiency of 1.55 cd A−1, which is 57% higher than that of a control QD-LED (0.99 cd A−1).

Graphical abstract: Interface dipole for remarkable efficiency enhancement in all-solution-processable transparent inverted quantum dot light-emitting diodes

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Publication details

The article was received on 18 Jan 2018, accepted on 11 Feb 2018 and first published on 12 Feb 2018


Article type: Paper
DOI: 10.1039/C8TC00303C
Citation: J. Mater. Chem. C, 2018,6, 2596-2603
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    Interface dipole for remarkable efficiency enhancement in all-solution-processable transparent inverted quantum dot light-emitting diodes

    L. Chen, M. Lee, Y. Wang, Y. S. Lau, A. A. Syed and F. Zhu, J. Mater. Chem. C, 2018, 6, 2596
    DOI: 10.1039/C8TC00303C

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