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Issue 15, 2018
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Electronic structures of layered Ta2NiS5 single crystals revealed by high-resolution angle-resolved photoemission spectroscopy

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Abstract

Using high-resolution angle-resolved photoemission spectroscopy (ARPES), we systematically studied the electronic structures of quasi-one-dimensional (1D) ternary material Ta2NiS5 single crystals. Contrary to its sister compound Ta2NiSe5, which is a candidate material for excitonic insulators, we found that Ta2NiS5 cannot realize the ground state of an excitonic insulator according to temperature-dependent valence band dispersions along the ΓX direction. In particular, the experimental ARPES data reveal that the electronic structures show strong two-dimensional characteristics along with a considerable in-plane anisotropy indicating evident coupling among the one-dimensional chain structures. Moreover, theoretical band calculations have to be compressed by a factor of about 15% in energy in order to match the experimental band structures, implying that some weak electron correlations are neglected in the band calculations.

Graphical abstract: Electronic structures of layered Ta2NiS5 single crystals revealed by high-resolution angle-resolved photoemission spectroscopy

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Publication details

The article was received on 10 Jan 2018, accepted on 26 Feb 2018 and first published on 21 Mar 2018


Article type: Paper
DOI: 10.1039/C8TC00149A
Citation: J. Mater. Chem. C, 2018,6, 3976-3981
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    Electronic structures of layered Ta2NiS5 single crystals revealed by high-resolution angle-resolved photoemission spectroscopy

    K. Mu, H. Chen, Y. Li, Y. Zhang, P. Wang, B. Zhang, Y. Liu, G. Zhang, L. Song and Z. Sun, J. Mater. Chem. C, 2018, 6, 3976
    DOI: 10.1039/C8TC00149A

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