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Issue 14, 2018
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Modification of acenes for n-channel OFET materials

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Abstract

With their electron-rich skeletons, acenes have traditionally been used as hole transporting materials in organic electronic applications. However, prudent structural modifications and revision of the structure of devices can yield good electron mobilities from acene-based organic semiconductors (OSCs). The majority of OSCs predominantly exhibit hole transporting behaviour and there is a scarcity of efficient and operationally stable n-type materials. Organic field effect transistors (OFETs) have been proved to be commercially viable alternatives to their inorganic counterparts, and there is increased need for efficient electron transporting materials in n-channel OFETs to build complementary circuit elements. This has boosted thorough investigation into acene-based n-type materials. In this review, various strategies are discussed for chemical modification of acenes for n-channel OFETs.

Graphical abstract: Modification of acenes for n-channel OFET materials

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Publication details

The article was received on 10 Jan 2018, accepted on 06 Mar 2018 and first published on 06 Mar 2018


Article type: Review Article
DOI: 10.1039/C8TC00146D
Citation: J. Mater. Chem. C, 2018,6, 3551-3563
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    Modification of acenes for n-channel OFET materials

    A. Naibi Lakshminarayana, A. Ong and C. Chi, J. Mater. Chem. C, 2018, 6, 3551
    DOI: 10.1039/C8TC00146D

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