Jump to main content
Jump to site search


Synthesis of Submillimeter SnSexS2-x (0<x<1) Two-dimensional Alloy and Photoinduced Reversible Transformation between Schottky and Ohmic Contact Behaviors in Devices

Abstract

Large-scale controllable synthesis of high-quality alloyed semiconductors with precise component and electronic modulation are of great importance for their applications in electronics and optoelectronics. Here, we demonstrate the direct synthesis of two-dimensional SnSexS2-x alloy via chemical vapor deposition (CVD) technique. Size of single-crystal flakes could reach up to 750 μm, ten times larger than previously reported CVD grown SnS2 and SnSe2. Morphology of the atmospheric pressure CVD grown SnSexS2-x flakes revealed an evolution from semi-hexagon to semi-circle as content of Se atom increased, while the low-pressure CVD alloyed flakes kept a constant shape of semi-hexagon. UV-visible spectroscopy and PL measurement revealed adjustability of band in the alloy flakes, where the higher Se atom content caused a narrower band gap. The SnSexS2-x devices performed high Ilight/Idark ratio under switching between light and dark, whose rise and fall time were just 225.9 μs and 646.2 μs, respectively. More importantly, the devices showed a Schottky-contact performance in dark condition, while it turned to be Ohmic performance under illumination, leading to a tunable Ilight/Idark ratio controlled by bias voltage between drain and source. This work can help the large-area growth technique and unique electrical properties improvement of two-dimensional alloys be closer to practical applications.

Back to tab navigation

Supplementary files

Publication details

The article was received on 27 Dec 2017, accepted on 10 Apr 2018 and first published on 13 Apr 2018


Article type: Paper
DOI: 10.1039/C7TC05936A
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
  •   Request permissions

    Synthesis of Submillimeter SnSexS2-x (0<x<1) Two-dimensional Alloy and Photoinduced Reversible Transformation between Schottky and Ohmic Contact Behaviors in Devices

    Y. Li, W. Xiao, G. Chen, H. Dong, X. Wang, T. Feng, L. Huang and J. Li, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C7TC05936A

Search articles by author

Spotlight

Advertisements