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Vertical layered MoS2/Si heterojunction for ultrahigh and ultrafast photoresponse photodetector

Abstract

Recently, chemical vapor deposition (CVD) prepared vertically oriented few-layer 2D materials have attracted much attention due to their attractive properties. However, the integration of these materials as heterojunctions in optoelectronic sensors were rarely reported. In this paper, large-area, high crystalline quality, and vertically few-layered MoS2 (V-MoS2) nanosheets were synthesized and transferred successfully onto a silicon substrate to form a V-MoS2/Si heterojunction photodetector. The photodetector exhibits high photoelectric performances in a wide broadband ranging from visible to near-infrared with photoresponsivity up to 908.2 mA/W, detectivity up to 1.8891013 Jones. More importantly, an unprecedented response speed of (rise time ~ 5 ns, fall time ~ 825 ns) was found in the photodetector by time response measurements, which is the best result achieved so far in any other 2D-based photodetectors or phototransistors. These excellent performances can be ascribed to the strong light absorption and the quick longitudinal intralayer carrier transport speed of the V-MoS2 nanosheets as well as the good heterojunction formed between V-MoS2 and Si. This intriguing vertical oriented structure in combination with both ultrafast time response and ultrahigh detectivity in V-MoS2/Si heterojunction makes it great potential application in optoelectronic devices.

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Publication details

The article was received on 22 Dec 2017, accepted on 08 Feb 2018 and first published on 09 Feb 2018


Article type: Paper
DOI: 10.1039/C7TC05896A
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Vertical layered MoS2/Si heterojunction for ultrahigh and ultrafast photoresponse photodetector

    S. Qiao, R. Cong, J. Liu, B. Liang, G. Fu, W. Yu, K. Ren, S. Wang and C. Pan, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C7TC05896A

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