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Issue 12, 2018
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Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides

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Abstract

Recently many novel magnetoresistance (MR) phenomena have been reported from studies of two dimensional (2D) materials. Here, we report on the exotic transport behavior of VS2. A large negative and quadratic MR of −10% is observed for an in-plane magnetic field B up to 14 T. Remarkably, when the applied field deviates from the in-plane orientation there is a threshold field, Bc, and the MR shows a plateau of near zero MR. When B < Bc, only a single state exists and the transition between quantum spin states is forbidden. Our work sheds new light on the MR of magnetic 2D materials with localized states and may spur further investigations.

Graphical abstract: Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides

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Publication details

The article was received on 15 Dec 2017, accepted on 26 Feb 2018 and first published on 27 Feb 2018


Article type: Paper
DOI: 10.1039/C7TC05769E
Citation: J. Mater. Chem. C, 2018,6, 3058-3064
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    Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides

    H. Xu, M. Hsu, H. Fuh, J. Feng, X. Han, Y. Zhao, D. Zhang, X. Wang, F. Liu, H. Liu, J. Cho, M. Choi, B. S. Chun, C. Ó Coileáin, Z. Wang, M. B. A. Jalil, H. Wu and C. Chang, J. Mater. Chem. C, 2018, 6, 3058
    DOI: 10.1039/C7TC05769E

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