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Issue 13, 2018
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High performance solution processed oxide thin-film transistors with inkjet printed Ag source–drain electrodes

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Abstract

This letter reports the fabrication of inkjet-printed thin-film transistor devices employing an electron transport layer incorporating polyethyleneimine for engineering of the interface between In2O3 semiconductor and Ag source/drain contacts, resulting in significant enhancement of saturation mobility by two orders of magnitude, from ∼0.03 cm2 (V s)−1 to ∼3.0 cm2 (V s)−1. The improvement is assigned to the lowered contact resistance between the source/drain electrodes and the underlying layers. The results are of importance for fully-printed oxide TFTs and circuits.

Graphical abstract: High performance solution processed oxide thin-film transistors with inkjet printed Ag source–drain electrodes

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Publication details

The article was received on 11 Dec 2017, accepted on 12 Mar 2018 and first published on 13 Mar 2018


Article type: Communication
DOI: 10.1039/C7TC05679F
Citation: J. Mater. Chem. C, 2018,6, 3220-3225
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    High performance solution processed oxide thin-film transistors with inkjet printed Ag source–drain electrodes

    L. Gillan, J. Leppäniemi, K. Eiroma, H. Majumdar and A. Alastalo, J. Mater. Chem. C, 2018, 6, 3220
    DOI: 10.1039/C7TC05679F

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