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Excellent high temperature field emission behaviors with ultra-low turn-on field and reliable current emission stability from SiC@SiO2@Graphene nanoarray emitters

Abstract

In the present work, for obtaining a prominent candidate, highly qualified SiC@SiO2@Graphene nanoarrays with numerous of flake-like Graphene coatings have been prepared on Si substrate through a simple chemical vapor deposition (CVD) approach. The field emission (FE) measurements show that the turn-on field (Eto) of the as-synthesized SiC@SiO2@Graphene nanoarrays is decreased dramatically from 1.75 V μm-1 to 0.73 V μm-1 with temperature increased from room temperature (RT) to 500 ℃, which is superior to most SiC one-dimensional (1D) nanomaterials. The current fluctuation of the emitters at RT and 200 ℃ is approximately 1.3% and 1.7%, respectively, suggesting the remarkable emission efficiency and stability of the sample. The excellent FE behaviors are mainly attributed to the distinctly increased electron emission sites and the Fermi level (Ef) adjustment caused by the multilayer heterostructure as well as the increased temperatures. Based on the structural components of the nanoarrays, a reasonable “Stripping Reconstruction” mechanism model has been firstly established. It is believed that not only the as-synthesized SiC@SiO2@Graphene nanoarrays can be serviced as promising emitters under high temperatures, but also the proposed mechanism model and the multilayer decoration strategy is also valuable for the FE enhancement of other 1D nanomaterials.

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Publication details

The article was received on 22 Nov 2017, accepted on 05 Feb 2018 and first published on 05 Feb 2018


Article type: Communication
DOI: 10.1039/C7TC05357F
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Excellent high temperature field emission behaviors with ultra-low turn-on field and reliable current emission stability from SiC@SiO2@Graphene nanoarray emitters

    Z. Li, J. Zhao, M. Zhang, Y. Wang, S. Ding, G. song, A. Meng and Q. Li, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C7TC05357F

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