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Issue 7, 2018
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Emerging perovskite materials for high density data storage and artificial synapses

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Abstract

Since the discovery of perovskite materials with the general chemical formula ABX3 in 1839, research on perovskite materials has drawn exponentially greater attention, owing to their flexible properties, including their ferroelectric, piezoelectric, and dielectric, as well as resistive switching, properties. Perovskite materials have high potential for developing nonvolatile high-density data storage devices. In this review, we summarized the current development of the application of perovskites in nonvolatile memories with an emphasis on the resistive switching properties. The unique advances of perovskite materials are introduced, followed by an assortment of the characterisations of their compositions and crystal structures. The insight into perovskite materials in artificial synapses has also concluded with predictable opportunities and challenges in this promising field.

Graphical abstract: Emerging perovskite materials for high density data storage and artificial synapses

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Publication details

The article was received on 21 Nov 2017, accepted on 16 Jan 2018 and first published on 16 Jan 2018


Article type: Review Article
DOI: 10.1039/C7TC05326F
Citation: J. Mater. Chem. C, 2018,6, 1600-1617
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    Emerging perovskite materials for high density data storage and artificial synapses

    Y. Wang, Z. Lv, L. Zhou, X. Chen, J. Chen, Y. Zhou, V. A. L. Roy and S. Han, J. Mater. Chem. C, 2018, 6, 1600
    DOI: 10.1039/C7TC05326F

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