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Issue 6, 2018
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Reducing the contact and channel resistances of black phosphorus via low-temperature vacuum annealing

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Abstract

The effects of post-fabrication vacuum annealing on the performance of black phosphorus (BP) field-effect transistors (FETs) were investigated. Ohmic contact to the BP layer was improved after vacuum annealing below 250 °C, showing better linearity in current–voltage output characteristics. In addition, the channel resistance was greatly improved from 39.5 to 0.299 kΩ mm after vacuum annealing over 200 °C due to the desorption of residues and adsorbates, which led to an enhanced device performance including a higher current injection efficiency, field-effect hole mobility (5.04 to 140 cm2 V−1 s−1), current on/off ratio (2.34 to 370), lower Ohmic loss (17.8 to 0.103 kΩ mm), and less hysteresis. The field-effect hole mobilities and current on/off ratios of the BP FET device vacuum-annealed at 250 °C were found to be 28 and 158 times higher, respectively, than those of the as-fabricated device. However, the device performance deteriorated after vacuum annealing over 300 °C owing to the catalytic amorphization of BP caused by the metal electrodes. Our results pave the way towards the development of high-performance BP-based devices with minimal parasitic elements via low-temperature vacuum annealing.

Graphical abstract: Reducing the contact and channel resistances of black phosphorus via low-temperature vacuum annealing

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Publication details

The article was received on 21 Nov 2017, accepted on 11 Jan 2018 and first published on 11 Jan 2018


Article type: Paper
DOI: 10.1039/C7TC05325H
Citation: J. Mater. Chem. C, 2018,6, 1567-1572
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    Reducing the contact and channel resistances of black phosphorus via low-temperature vacuum annealing

    H. Park, J. Son and J. Kim, J. Mater. Chem. C, 2018, 6, 1567
    DOI: 10.1039/C7TC05325H

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