Jump to main content
Jump to site search

Issue 8, 2018
Previous Article Next Article

Topologically protected hybrid states in graphene–stanene–graphene heterojunctions

Author affiliations

Abstract

A gapless conducting boundary state is one of the salient features of time-reversal-invariant topological insulators (TIs), which have attracted a lot of interest due to their fundamental importance and practical applications. Achieving robust non-trivial edge channels at the solid-state interface is a crucial step towards functional junction-based modern electronic devices. Here, we report a van der Waals heterostructure based graphene–stanene–graphene (C–Sn–C) quantum wall (QW), which shows a topologically protected hybrid state at the graphene–stanene interface. The inverted band ordering and metallic edge states confirm the non-trivial band topology with a non-trivial band gap of 0.15 eV, which is considerably higher than that of stanene. We find that the hybrid state in the QW provides topological protection in graphene. The high carrier mobility of graphene and the QSH state of stanene may coexist in the C–Sn–C system and that could pave the way to novel spin-based electronic devices.

Graphical abstract: Topologically protected hybrid states in graphene–stanene–graphene heterojunctions

Back to tab navigation

Supplementary files

Publication details

The article was received on 15 Nov 2017, accepted on 24 Jan 2018 and first published on 24 Jan 2018


Article type: Communication
DOI: 10.1039/C7TC05212J
Citation: J. Mater. Chem. C, 2018,6, 1920-1925
  •   Request permissions

    Topologically protected hybrid states in graphene–stanene–graphene heterojunctions

    C. Mondal, S. Kumar and B. Pathak, J. Mater. Chem. C, 2018, 6, 1920
    DOI: 10.1039/C7TC05212J

Search articles by author

Spotlight

Advertisements