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Issue 5, 2018
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Synthesis of n-AlGaN nanoflowers by MOCVD for high-performance ultraviolet-C photodetectors

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Abstract

AlxGa1−xN nanostructure based ultraviolet-C photodetectors have attracted nascent research attention owing to their low cost, tunable band gap, simple operation, and smaller and lightweight systems. However, the synthesis of high quality AlxGa1−xN nanostructures by MOCVD has been limited by their complex multi-component phase diagram and inhomogeneous composition. Here, we report the synthesis of Si-doped n-type compositionally uniform Al0.45Ga0.55N alloy with flower-like morphology (nanoflowers) by MOCVD. Quasi vertically aligned and preferentially c-axis oriented n-AlGaN nanoflowers consist of a large number of self-assembled one-dimensional nanowires that tend to grow radially from the center. The n-AlGaN nanowires are single crystalline in nature and grow along the (0002) direction. The low temperature (88 K) cathodoluminescence spectra of the AlGaN nanoflowers displayed a strong band edge emission at ∼280 nm, which shifted to ∼292 nm at room temperature. The photoresponsivity and sensitivity of the ultraviolet-C photodetectors fabricated with n-AlGaN nanoflowers are ∼0.72 A W−1 and ∼40%, respectively, at 2 V. The nanoflower based device exhibited remarkably superior photoresponse characteristics to the device fabricated with AlGaN nanorods or nanowires, which were synthesized under different MOCVD growth conditions. A large surface-to-volume ratio and a higher density of the nanoflowers enhance photon absorption, resulting in photocurrent gain, a substantially high quantum efficiency and hence improved photoresponse characteristics.

Graphical abstract: Synthesis of n-AlGaN nanoflowers by MOCVD for high-performance ultraviolet-C photodetectors

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Publication details

The article was received on 14 Nov 2017, accepted on 02 Jan 2018 and first published on 03 Jan 2018


Article type: Paper
DOI: 10.1039/C7TC05182D
Citation: J. Mater. Chem. C, 2018,6, 1176-1186
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    Synthesis of n-AlGaN nanoflowers by MOCVD for high-performance ultraviolet-C photodetectors

    S. Kang, R. Nandi, H. Kim, K. Jeong and C. Lee, J. Mater. Chem. C, 2018, 6, 1176
    DOI: 10.1039/C7TC05182D

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