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Issue 11, 2018
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Laser-induced persistent photo-dielectric effects in Se–Te–Sn–Cd chalcogenide glassy semiconductors (STSC ChGs)

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Abstract

We have observed significant variation in the dielectric parameters (i.e., dielectric constant ε′ and dielectric loss ε′′) and a.c. conductivity after exposure of novel multi-component STSC ChGs to laser light of different wavelengths. The photo-dielectric effect (i.e., a variation in ε′ and dielectric loss ε′′ due to laser irradiation) varies with variation in the wavelength of the laser light used. Thermally activated a.c. conduction is also affected by exposure to laser light. The a.c. conductivity σac and the associated activation energy Eac are increased appreciably after laser exposure. The possible mechanism of laser-induced photo-dielectric effects is also discussed in terms of a duo-dielectric capacitor model as a consequence of the creation of an interface after laser exposure. A new approach (persistent photo-dielectric effects) has been suggested for the explanation of the observed results.

Graphical abstract: Laser-induced persistent photo-dielectric effects in Se–Te–Sn–Cd chalcogenide glassy semiconductors (STSC ChGs)

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Publication details

The article was received on 13 Nov 2017, accepted on 08 Feb 2018 and first published on 09 Feb 2018


Article type: Paper
DOI: 10.1039/C7TC05176J
Citation: J. Mater. Chem. C, 2018,6, 2747-2759
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    Laser-induced persistent photo-dielectric effects in Se–Te–Sn–Cd chalcogenide glassy semiconductors (STSC ChGs)

    A. Kumar and N. Mehta, J. Mater. Chem. C, 2018, 6, 2747
    DOI: 10.1039/C7TC05176J

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