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Laser-induced persistent photo-dielectric effects in Se-Te-Sn-Cd chalcogenide glassy semiconductors (STSC ChGs)

Abstract

We have observed significant variation in the dielectric parameters (i.e., dielectric constant  and dielectric loss ) and a.c. conductivity after exposure of novel multi-component STSC ChGs by laser light of different wavelengths. The photo-dielectric effect (i.e., a variation in  and dielectric loss  due to laser-irradiation) varies with variation in the wavelength of the laser light used. Thermally activated a.c. conduction is also affected by exposure of laser light. The a.c. conductivity σac and the associated activation energy Eac are increased appreciably after laser exposure. The possible mechanism of laser-induced photo-dielectric effects is also discussed in terms of duo-dielectric capacitor model as a consequence of creation of an interface after laser exposure. A new approach (persistent photo-dielectric effects) has been suggested for the explanation of observed results.

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Publication details

The article was received on 13 Nov 2017, accepted on 08 Feb 2018 and first published on 09 Feb 2018


Article type: Paper
DOI: 10.1039/C7TC05176J
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Laser-induced persistent photo-dielectric effects in Se-Te-Sn-Cd chalcogenide glassy semiconductors (STSC ChGs)

    A. Kumar and N. Mehta, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C7TC05176J

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