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Studies of spin related processes in fullerene C60 devices

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Abstract

We have investigated spin related processes in fullerene C60 devices using several experimental techniques, which include magnetic field effect of photocurrent and electroluminescence in C60-based diodes; spin polarized carrier injection in C60-based spin-valves; and pure spin current generation in NiFe/C60/Pt trilayer devices. We found that the ‘curvature-related spin orbit coupling’ in C60 plays a dominant role in the obtained spin-related phenomena. The measured magneto-photocurrent and magneto-electroluminescence responses in C60 diodes are dominated by the difference in the g-values of hole and electron polarons in the fullerene molecules. We also obtained giant magneto-resistance of ∼10% at 10 K in C60 spin-valve devices, where spin polarized holes are injected into the C60 interlayer. In addition, using the technique of spin-pumping in NiFe/C60/Pt trilayer devices with various C60 interlayer thicknesses we determined the spin diffusion length in C60 films to be 13 ± 2 nm at room temperature.

Graphical abstract: Studies of spin related processes in fullerene C60 devices

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Publication details

The article was received on 08 Nov 2017, accepted on 14 Feb 2018 and first published on 14 Feb 2018


Article type: Paper
DOI: 10.1039/C7TC05086K
Citation: J. Mater. Chem. C, 2018, Advance Article
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    Studies of spin related processes in fullerene C60 devices

    H. Liu, J. Wang, M. Groesbeck, X. Pan, C. Zhang and Z. V. Vardeny, J. Mater. Chem. C, 2018, Advance Article , DOI: 10.1039/C7TC05086K

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