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Polypyridyl Chromium(III) Complexes for Non-Volatile Memory Application: Impact of Coordination Sphere on Memory Device Performance

Abstract

Molecular non-volatile memory devices are deemed to offer remarkable features such as low-cost, high retention times and low power consumption that could possibly catapult its implementation over the contemporary silicon based devices. Although scattered examples of small molecules, especially transition metal complexes with rich electrochemical behavior, have been demonstrated to show promising performance in memory device application, systematic study on molecular design and the structure-property relationship is lacking. Moreover, the studies of memory applications of transition metal complexes have been mainly confined to those of precious metal. These have hindered the development and the practical applications of the molecular non-volatile memory devices. To improve the practical applicability of transition metal complex based molecular memory devices, herein, we report the study of memory applications of various solution-processable and earth-abundant polypyridyl Cr(III) complexes. Some of the fabricated resistive random-access memory (RRAM) devices exhibit reversible bipolar switching, high ON/OFF ratio and long retention time. It is anticipated that this work would provide important insights on the molecular design of transition metal complexes for memory device applications and would lead to a new generation of economically accessible and sustainable non-volatile memory devices.

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Publication details

The article was received on 02 Nov 2017, accepted on 09 Jan 2018 and first published on 10 Jan 2018


Article type: Paper
DOI: 10.1039/C7TC04986B
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    Polypyridyl Chromium(III) Complexes for Non-Volatile Memory Application: Impact of Coordination Sphere on Memory Device Performance

    B. Kandasamy, G. Ramar, L. zhou, S. Han, S. Venkatesh, S. Cheng, Z. Xu, C. Ko and V. A. L. Roy, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C7TC04986B

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