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High-Performance Flexible Oxide TFTs: Optimization of a-IGZO Film by Modulating Voltage Waveform of Pulse DC Magnetron Sputtering without Post Treatments

Abstract

We proposed a facile and scalable approach to fabricate high performance flexible a-IGZO thin film transistors (TFTs) by adopting the waveform modulation of pulse DC magnetron sputtering (PDCMS) to rationally optimize the film quality of semiconductor without post treatment. The voltage waveform was modulated by rationally altering the frequency and duty cycles, and, consequently, an optimum film quality of a-IGZO film was obtained that resulting in the outstanding performance of flexile oxide TFTs. A series of characterizations (TEM, XRR AFM, XPS, μ-PCD etc.) were carried out to understand the mechanism of a-IGZO semiconductor film growth. The flexible TFT with an optimum a-IGZO film exhibited a mobility (μsat) of 20.9 cm2 V-1 s-1 and a good stability under bending strain. This work provides an alternative approach to fabricate high performance flexible a-IGZO TFTs on an industrial scale.

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Publication details

The article was received on 01 Nov 2017, accepted on 04 Feb 2018 and first published on 05 Feb 2018


Article type: Paper
DOI: 10.1039/C7TC04970F
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
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    High-Performance Flexible Oxide TFTs: Optimization of a-IGZO Film by Modulating Voltage Waveform of Pulse DC Magnetron Sputtering without Post Treatments

    R. Yao, Z. Zheng, Z. Fang, H. Zhang, X. Zhang, H. Ning, L. Wang, J. Peng, W. Xie and X. Lu, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C7TC04970F

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