Jump to main content
Jump to site search

Issue 10, 2018
Previous Article Next Article

High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment

Author affiliations

Abstract

We propose a facile and scalable approach to fabricate high performance flexible a-IGZO thin film transistors (TFTs) by adopting the waveform modulation of pulse DC magnetron sputtering (PDCMS) to rationally optimize the film quality of semiconductors without post treatment. The voltage waveform was modulated by rationally altering the frequency and duty cycles, and, consequently, an optimum film quality of a-IGZO film was obtained that resulted in the outstanding performance of the flexile oxide TFTs. A series of characterizations (TEM, XRR AFM, XPS, μ-PCD etc.) were carried out to understand the mechanism of a-IGZO semiconductor film growth. The flexible TFT with an optimum a-IGZO film exhibited a mobility (μsat) of 20.9 cm2 V−1 s−1 and good stability under bending strain. This work provides an alternative approach to fabricate high performance flexible a-IGZO TFTs on an industrial scale.

Graphical abstract: High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment

Back to tab navigation

Supplementary files

Publication details

The article was received on 01 Nov 2017, accepted on 04 Feb 2018 and first published on 05 Feb 2018


Article type: Paper
DOI: 10.1039/C7TC04970F
Citation: J. Mater. Chem. C, 2018,6, 2522-2532
  •   Request permissions

    High-performance flexible oxide TFTs: optimization of a-IGZO film by modulating the voltage waveform of pulse DC magnetron sputtering without post treatment

    R. Yao, Z. Zheng, Z. Fang, H. Zhang, X. Zhang, H. Ning, L. Wang, J. Peng, W. Xie and X. Lu, J. Mater. Chem. C, 2018, 6, 2522
    DOI: 10.1039/C7TC04970F

Search articles by author

Spotlight

Advertisements