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Issue 6, 2018
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Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

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Abstract

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs). The structural, morphological components, and optical properties of CuCrxOy thin films, together with device performance, were systematically investigated. The phase conversion from a mixture of CuCr2O4 and CuO to pure CuCrO2 was achieved when the annealing temperature (Ta) was higher than 700 °C. The electrical performance of the CuCrxOy TFTs on SiO2 dielectric is improved with increasing Ta from 500 °C to 800 °C. The optimized CuCrO2 TFT exhibits an on/off current ratio of ∼105 and a hole mobility of 0.59 cm2 V−1 s−1, which is much better than those previous works on solution-processed binary CuxO TFTs. To our best knowledge, this work demonstrates the ternary p-type CuCrO2 TFTs fabricated via a low-cost solution process for the first time, which represents an important advancement towards the development of all-oxide, low-cost p–n junctions and CMOS logic circuits.

Graphical abstract: Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

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Publication details

The article was received on 21 Oct 2017, accepted on 10 Jan 2018 and first published on 11 Jan 2018


Article type: Paper
DOI: 10.1039/C7TC04810F
Citation: J. Mater. Chem. C, 2018,6, 1393-1398
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    Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

    S. Nie, A. Liu, Y. Meng, B. Shin, G. Liu and F. Shan, J. Mater. Chem. C, 2018, 6, 1393
    DOI: 10.1039/C7TC04810F

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