Jump to main content
Jump to site search


Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

Abstract

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin-coating and integrated as channel layers in thin-film transistors (TFTs). The structural, morphological, component, and optical properties of CuCrxOy thin films, together with the device performance, were systematically investigated. The phase conversion from the mixture of CuCr2O4 and CuO to pure CuCrO2 was achieved when the annealing temperature (Ta) was higher than 700 oC. The electrical performance of the CuCrxOy TFTs on SiO2 dielectric is improved with increasing Ta from 500 oC to 800 oC. The optimized CuCrO2 TFTs exhibit an on/off current ratio of ~105 and a hole mobility of 0.59 cm2 V-1 s-1, which is much better than those previous works on solution-processed binary CuxO TFTs. To our best knowledge, this work demonstrates the ternary p-type CuCrO2 TFTs via low-cost solution process for the first time, which represents an important advance towards the development of all-oxide, low-cost p-n junctions and CMOS logic circuits.

Back to tab navigation

Supplementary files

Publication details

The article was received on 21 Oct 2017, accepted on 10 Jan 2018 and first published on 11 Jan 2018


Article type: Paper
DOI: 10.1039/C7TC04810F
Citation: J. Mater. Chem. C, 2018, Accepted Manuscript
  •   Request permissions

    Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

    S. Nie, A. Liu, Y. Meng, B. Shin, G. Liu and F. Shan, J. Mater. Chem. C, 2018, Accepted Manuscript , DOI: 10.1039/C7TC04810F

Search articles by author

Spotlight

Advertisements