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n-Type organic light-emitting transistors with high mobility and improved air stability

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Abstract

n-Channel organic light-emitting field-effect transistors (OLETs) based on perylene diimide (PDI-C13) with improved air stability were fabricated using a short channel length and thermal annealing. Both shortening of channel length and thermal annealing improved source–drain current; thermal annealing facilitated charge injection and improved PLQY of the PDI-C13 film. The light-emitting mechanism of OLETs was elaborated: that is, the OLETs were lateral organic light-emitting diodes in nature, the gate voltage (VGS) modulated light intensity by controlling electron density, and the light intensity was a quadratic function of VGS. This is the first example of n-channel OLETs that can operate in air.

Graphical abstract: n-Type organic light-emitting transistors with high mobility and improved air stability

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Publication details

The article was received on 06 Oct 2017, accepted on 11 Dec 2017 and first published on 02 Jan 2018


Article type: Paper
DOI: 10.1039/C7TC04556E
Citation: J. Mater. Chem. C, 2018, Advance Article
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    n-Type organic light-emitting transistors with high mobility and improved air stability

    L. Ma, D. Qin, Y. Liu and X. Zhan, J. Mater. Chem. C, 2018, Advance Article , DOI: 10.1039/C7TC04556E

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