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Issue 3, 2018
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Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

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Abstract

Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD). The films were fully characterised by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The optoelectronic properties of the films were determined using UV/vis spectroscopy and Hall effect measurements. The AGZO film displayed the lowest resistivity (1.3 × 10−2 Ω cm) and highest carrier mobility (7.9 cm2 V−1 s−1), due the relatively low amount of disorder in the structure. The incorporation of In3+ resulted in the most disorder in the structure due to its large radius, which led to an increase in optical absorption, and a decrease in resistivity.

Graphical abstract: Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

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Publication details

The article was received on 01 Sep 2017, accepted on 07 Nov 2017 and first published on 04 Jan 2018


Article type: Paper
DOI: 10.1039/C7TC04003B
Citation: J. Mater. Chem. C, 2018,6, 588-597
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    Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

    D. B. Potter, M. J. Powell, I. P. Parkin and C. J. Carmalt, J. Mater. Chem. C, 2018, 6, 588
    DOI: 10.1039/C7TC04003B

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