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Fabrication of FTO-BiVO4-W-WO3 photoanode for photoelectrochemical performance improving: based on the Z-scheme electron transfer mechanism

Abstract

FTO-BiVO4-W-WO3 photoanode was fabricated in this work. A Z-scheme photocarriers transfer route can form in the composite photoanode and achieve a photocurrent density of 5 mA/cm2 under visible light (100 mW/cm2). In addition, WO3 layer covers on the surface of BiVO4, improving the stability of the photoelectrochemical performance.

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Publication details

The article was received on 29 Mar 2018, accepted on 12 Jun 2018 and first published on 14 Jun 2018


Article type: Communication
DOI: 10.1039/C8TA02916D
Citation: J. Mater. Chem. A, 2018, Accepted Manuscript
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    Fabrication of FTO-BiVO4-W-WO3 photoanode for photoelectrochemical performance improving: based on the Z-scheme electron transfer mechanism

    R. Wang, T. Xie, T. Zhang, T. Pu, Y. Bu and J. Ao, J. Mater. Chem. A, 2018, Accepted Manuscript , DOI: 10.1039/C8TA02916D

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