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Issue 27, 2018
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Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

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Abstract

FTO–BiVO4–W–WO3 photoanode is fabricated in this study. A Z-scheme photocarrier transfer route can form in the composite photoanode and a photocurrent density of 5 mA cm−2 under visible light (100 mW cm−2) can be achieved. In addition, a WO3 layer covers the surface of BiVO4, improving the stability of the photoelectrochemical performance.

Graphical abstract: Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

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Publication details

The article was received on 29 Mar 2018, accepted on 12 Jun 2018 and first published on 14 Jun 2018


Article type: Communication
DOI: 10.1039/C8TA02916D
Citation: J. Mater. Chem. A, 2018,6, 12956-12961
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    Fabrication of FTO–BiVO4–W–WO3 photoanode for improving photoelectrochemical performance: based on the Z-scheme electron transfer mechanism

    R. Wang, T. Xie, T. Zhang, T. Pu, Y. Bu and J. Ao, J. Mater. Chem. A, 2018, 6, 12956
    DOI: 10.1039/C8TA02916D

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