Jump to main content
Jump to site search


Linking Thermoelectric Generation in Polycrystalline Semiconductors to Grain Boundary Effects Sets a Platform for Novel Seebeck Effect-Based Sensors

Abstract

Data available on the thermoelectric properties of polycrystalline semiconductors are inconsistent, riddled with gaps, and ascribe stronger Seebeck effects to polycrystalline samples rather than single crystals. Here, by demonstrating the profound contribution of the grain boundaries to the Seebeck voltage generation, we link the thermoelectricity in the polycrystalline semiconductors to the grain boundary effects therein. The magnitude of this contribution is analytically connected to the height and width of the intergranular barriers which are extrinsic properties in a polycrystalline sample and can be affected by external physicochemical parameters. Occurrences of chemo- and piezo-thermoelectric effects are analytically predicted and experimentally verified by the results of measurements on SnO2 and ZnO samples with different nanostructures in various conditions. The presented model sets a platform for designing a range of novel Seebeck effect-based sensors, and unveils potentials of the polycrystalline semiconductors with appropriately designed intergranular barriers as thermoelectric materials.

Back to tab navigation

Publication details

The article was received on 24 Mar 2018, accepted on 10 May 2018 and first published on 11 May 2018


Article type: Paper
DOI: 10.1039/C8TA02732C
Citation: J. Mater. Chem. A, 2018, Accepted Manuscript
  •   Request permissions

    Linking Thermoelectric Generation in Polycrystalline Semiconductors to Grain Boundary Effects Sets a Platform for Novel Seebeck Effect-Based Sensors

    F. Hossein-Babaei, S. Masoumi and A. Noori, J. Mater. Chem. A, 2018, Accepted Manuscript , DOI: 10.1039/C8TA02732C

Search articles by author

Spotlight

Advertisements