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Issue 18, 2018
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Synergetic optimization of electronic and thermal transport for high-performance thermoelectric GeSe–AgSbTe2 alloy

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Abstract

Rhombohedral GeSe is a promising p-type thermoelectric material with a multivalley band structure. However, its figure of merit ZT, especially average ZT is still relatively low compared with the state-of-art thermoelectric materials. Here, we show that alloying with AgSbTe2 can synergistically optimize the electronic and thermal transport properties of GeSe. On one hand, alloying can tune the crystal field and promote the band convergence between the lower light valence band and higher heavy valence band. The rising light valence band maximum increases both the density of state effective mass and carrier mobility, leading to a significantly improved power factor. On the other hand, the phonon scattering is also enhanced by the alloying effect, resulting in a low lattice thermal conductivity of 0.7 W m−1K−1 at 754 K. A peak ZT of ≈1.0 at 754 K was achieved in GeSeAg0.2Sb0.2Te0.4 and more importantly, the ZTavg (0.65) between 301 K and 754 K was improved by more than 56% compared to GeSeAg0.2Sb0.2Se0.4 (ZTavg = 0.41).

Graphical abstract: Synergetic optimization of electronic and thermal transport for high-performance thermoelectric GeSe–AgSbTe2 alloy

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Publication details

The article was received on 09 Feb 2018, accepted on 10 Apr 2018 and first published on 11 Apr 2018


Article type: Communication
DOI: 10.1039/C8TA01393D
Citation: J. Mater. Chem. A, 2018,6, 8215-8220
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    Synergetic optimization of electronic and thermal transport for high-performance thermoelectric GeSe–AgSbTe2 alloy

    M. Yan, X. Tan, Z. Huang, G. Liu, P. Jiang and X. Bao, J. Mater. Chem. A, 2018, 6, 8215
    DOI: 10.1039/C8TA01393D

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