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Issue 16, 2018
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Oxygen vacancies on the surface of HxWO3−y for enhanced charge storage

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Abstract

The dominant role of surface oxygen vacancies (OVs) in improving energy storage is underscored by comparing the OV-mediated charge storage performance of surface and bulk defective HxWO3−y with that of WO3 and bulk defective e-HxWO3−y. It shows that surface OVs are key hot spots for faradaic reactions in HxWO3−y, which promotes the formation of certain W5+ and W4+ during the reduction process.

Graphical abstract: Oxygen vacancies on the surface of HxWO3−y for enhanced charge storage

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Publication details

The article was received on 30 Jan 2018, accepted on 21 Mar 2018 and first published on 21 Mar 2018


Article type: Communication
DOI: 10.1039/C8TA00981C
Citation: J. Mater. Chem. A, 2018,6, 6780-6784
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    Oxygen vacancies on the surface of HxWO3−y for enhanced charge storage

    H. Wang, R. Fan, J. Miao, J. Chen, S. Mao, J. Deng and Y. Wang, J. Mater. Chem. A, 2018, 6, 6780
    DOI: 10.1039/C8TA00981C

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