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Photogenerated-Carrier Separation along Edge Dislocation of WO3 Single Crystal Nanoflower Photoanode

Abstract

Point defect such as oxygen vacancy in semiconductor, has been widely evidenced that it can influence the separation and transfer processes of the photogenerated hot charges. Except point defect, to date, scarcely any study focused on expounding the functions of line defect (such as dislocation) in the crystal of semiconductor photoanode and how to influence the photogenerated hot charges separation process. Herein, we reported a nanoflower (NF) like WO3 single crystal thin film photoanode with edge dislocations distributed in the crystal of WO3 NF, inducing mismatch of (002) and (020) facets. Further photoelectrochemical (PEC) performances and DOS calculation results indicated that similar with surface facet heterojunction, a heterojunction system could be formed along the edge dislocations area due to the energy difference between the mismatched (002) and (020) facets. So, this present study provided a understanding of the line defect in the photogenerated hot carrier separation process, and provided a novel method to improve the properties of photoelectrodes and photocatalytic materials in the near future.

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Publication details

The article was received on 24 Jan 2018, accepted on 14 Apr 2018 and first published on 16 Apr 2018


Article type: Paper
DOI: 10.1039/C8TA00796A
Citation: J. Mater. Chem. A, 2018, Accepted Manuscript
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    Photogenerated-Carrier Separation along Edge Dislocation of WO3 Single Crystal Nanoflower Photoanode

    Y. Bu, J. Ren, H. Zhang, D. Yang, Z. Chen and J. Ao, J. Mater. Chem. A, 2018, Accepted Manuscript , DOI: 10.1039/C8TA00796A

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