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Issue 9, 2018
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Interdigitated back-contacted crystalline silicon solar cells with low-temperature dopant-free selective contacts

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Abstract

In the field of crystalline silicon solar cells, great efforts are being devoted to the development of selective contacts in search of a fully low-temperature and dopant-free fabrication process compatible with high photovoltaic conversion efficiencies. For high-efficiency devices, selective contacts have to simultaneously combine high conductivity with excellent passivating properties. With this objective, a thin passivating extra layer of a-Si:H or SiO2 is usually introduced between the conducting layer and the silicon substrate. In this work, we present an interdigitated back-contacted (IBC) silicon based solar cell that avoids the use of either thermal SiO2 or a-Si:H interlayers achieving a dopant-free, ITO-free and very low thermal budget fabrication process. In this work, we propose a new electron transport layer using ultrathin Al2O3/TiO2 stacks deposited by atomic layer deposition at 100 °C covered with a thermally evaporated Mg capping film. A specific contact resistance of 2.5 mΩ cm2 has been measured together with surface recombination velocities below 40 cm s−1. This electron-selective contact is combined with a thermally evaporated V2Ox-based hole selective contact to form the rear scheme of an IBC structure with a 3 × 3 cm2 active area as a proof-of-concept resulting in efficiencies beyond 19%. This approach sheds light on potential technological simplification and cost reduction in crystalline silicon solar cells.

Graphical abstract: Interdigitated back-contacted crystalline silicon solar cells with low-temperature dopant-free selective contacts

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Publication details

The article was received on 27 Dec 2017, accepted on 26 Jan 2018 and first published on 26 Jan 2018


Article type: Paper
DOI: 10.1039/C7TA11308K
Citation: J. Mater. Chem. A, 2018,6, 3977-3985
  • Open access: Creative Commons BY license
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    Interdigitated back-contacted crystalline silicon solar cells with low-temperature dopant-free selective contacts

    G. Masmitjà, P. Ortega, J. Puigdollers, L. G. Gerling, I. Martín, C. Voz and R. Alcubilla, J. Mater. Chem. A, 2018, 6, 3977
    DOI: 10.1039/C7TA11308K

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