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Recent Progress on High Performance of Tin Chalcogenides Thermoelectric Materials

Abstract

Thermoelectric materials have been extensively studied for decades to help resolve the global energy shortage and environmental problems. Many efforts were focusing on the improvement of the figure of merit (ZT) for high efficient power generation. Lead telluride is one of the materials with high ZT, but lead toxicity is always a concern, which has inspired the research on lead-free tin chalcogenides. ZT values as high as ~2.6 at 923 K for SnSe single crystal and ~1.6 at 923 K for Sn0.86Mn0.14Te(Cu2Te)0.05-5 atm. % Sn were recently reported, attracting extensive attention for potential applications. In this review, we present the progress in SnTe, SnSe, and SnS, mainly discussing the effective tuning of the electron and phonon transport based on the intrinsic properties, along with the challenges for further optimization and applications. For SnTe, successful strategies, including resonant doping, band convergence, and defect engineering etc. are discussed. For SnSe, we focus on the analysis of the intrinsic low thermal conductivity due to strong anharmonicity and high Seebeck coefficient because of the multi valley bands. For SnS, high performance is expected considering the similar band structure and crystal structure with SnSe.

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Publication details

The article was received on 11 Nov 2017, accepted on 05 Jan 2018 and first published on 08 Jan 2018


Article type: Review Article
DOI: 10.1039/C7TA09941J
Citation: J. Mater. Chem. A, 2018, Accepted Manuscript
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    Recent Progress on High Performance of Tin Chalcogenides Thermoelectric Materials

    S. Li, X. Li, Z. Ren and Q. Zhang, J. Mater. Chem. A, 2018, Accepted Manuscript , DOI: 10.1039/C7TA09941J

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