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Activation of a particulate Ta3N5 water-oxidation photoanode with a GaN hole-blocking layer

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Abstract

Particulate Ta3N5, a material that responds to visible light for photoelectrochemical O2 evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta3N5 to the back-contact metal layer and prevented hole–electron recombination.

Graphical abstract: Activation of a particulate Ta3N5 water-oxidation photoanode with a GaN hole-blocking layer

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Publication details

The article was received on 16 Aug 2017, accepted on 13 Oct 2017 and first published on 13 Oct 2017


Article type: Communication
DOI: 10.1039/C7SE00402H
Citation: Sustainable Energy Fuels, 2018, Advance Article
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    Activation of a particulate Ta3N5 water-oxidation photoanode with a GaN hole-blocking layer

    Y. Asakura, T. Higashi, H. Nishiyama, H. Kobayashi, M. Nakabayashi, N. Shibata, T. Minegishi, T. Hisatomi, M. Katayama, T. Yamada and K. Domen, Sustainable Energy Fuels, 2018, Advance Article , DOI: 10.1039/C7SE00402H

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